Polishing apparatus, method of manufacturing semiconductor device employing this polishing apparatus, and semiconductor device manufactured by this method of manufacturing semiconductor device

ABSTRACT

While data that indicate a relationship between a dressing position P defined by a distance between a rotating shaft  11  of a polishing pad  13  and a rotating shaft  31  of a dresser  30  and shape change of the polishing pad  13  based on input of a target shape of the polishing pad  13  and alternating repetition of dressing the polishing pad  13  by the dresser  30  and measurement of shape of the polishing pad  13  by a pad shape measurement instrument  20  is acquired at a stage prior to commencement of a series of polishing steps for continuously polishing a plurality of polishing target objects (semiconductor wafer W) by a polishing tool  10 , the polishing pad  13  is machined to the target shape  13  while the dressing position P is controlled, whereby the dressing position P is set during the polishing steps on the basis of a processing result of this data.

FIELD OF THE INVENTION

The present invention relates to a polishing apparatus for polishing thesurface of a polishing target object. The present invention furtherrelates to a method of manufacturing a semiconductor device in use ofthis polishing apparatus, and to a semiconductor device manufactured bythis method of manufacturing a semiconductor device.

BACKGROUND OF THE INVENTION

Polishing apparatuses for polishing the surface of a polishing targetobject (for example, a semiconductor wafer) comprise a polishing tool onwhich a polishing pad is mounted and polishing target object holdingmeans such as a rotating support for holding the polishing target objectand are configured to polish the surface of the polishing target objectas a result of the polishing tool and polishing target object holdingmeans being relatively moved with the polishing pad in a state ofcontact with the polishing target object held by polishing target objectholding means. Polishing target object shavings generated throughout thesurface polishing thereof and slurry dregs and so on of a slurrysupplied to the surface to be polished of the polishing target objectcreate blockages in the surface of the polishing pad of these polishingapparatuses which, as a result, must be dressed by a separately provideddresser (for example, see Japanese Unexamined Patent ApplicationPublication Nos. H10-86056, 2003-68688 and 2004-25413).

The polishing pad provided on the polishing tool changes the polishingstate of the polishing target object in accordance with its shape. Inother words, the polishing state of a polishing target object can beadjusted by preparing a polishing pad of a predetermined shape.Accordingly, the polishing pad must be dressed not only to removeblockages of the pad surface but also to form the polishing pad in theaforementioned predetermined shape. The way that a polishing pad isplaned changes when the relative position of the dresser with respect tothe polishing pad is altered and, accordingly, the polishing pad shapecan be gradually caused to approach the predetermined shape by dressingthe polishing pad while measuring Changes in the surface shape of thepolishing pad.

Problems to be Solved by the Invention

However, the conventional operation for finishing a polishing pad to apredetermined shape is a so-called manual operation performed by anoperator on the basis of trial and error. Accordingly, shape adjustmentof the polishing pad at a stage prior to the polishing steps (series ofsteps for continuously polishing a plurality of polishing target objectsby a polishing tool) being performed takes time and, on occasion,results in a reduction in the throughput of the polishing steps as awhole. In addition, while the conditions for polishing the polishingtarget object (various conditions during polishing such as the relativemovement speed and polishing time and so on of the polishing pad withrespect to the polishing target object) must be individually set inaccordance with the polishing pad type and so on, an operator themselfmust adjudge what type of polishing pad is mounted on the polishing toolin order to set the polishing conditions in this way. For this reason aswell, the throughput of the polishing steps as a whole is sometimespoor.

In addition, because shape adjustment of a polishing pad performedduring the course of the polishing steps (series of steps forcontinuously polishing a plurality of polishing target objects by apolishing tool) conventionally necessitates interruption to the seriesof polishing steps and then a manual adjustment performed by an operatoron the basis of trial and error, the throughput of the polishing stepsas a whole is reduced.

SUMMARY OF THE INVENTION

With the foregoing in mind, it is an object of the present invention toprovide a polishing apparatus of a configuration that facilitatesimproved throughput of the polishing steps as a whole, and to a methodof manufacturing a semiconductor device employing the polishingapparatus and a semiconductor device manufactured by the method ofmanufacturing a semiconductor device.

The polishing apparatus pertaining to the present invention comprises: apolishing tool on which a polishing pad is mounted; and polishing targetobject holding means (for example, rotating support 40 of thisembodiment) for holding a polishing target object, and which polishesthe surface of the polishing target object by a relative movement of thepolishing tool and polishing target object holding means with thepolishing pad being in a state of contact with the polishing targetobject held by polishing target object holding means, and the polishingapparatus further comprises: a dresser for dressing the polishing pad bybringing the rotated dressing surface thereof into contact with thesurface of the polishing pad mounted on the polishing tool; pad shapemeasurement means (for example, pad shape measurement instrument 20 ofthe embodiments) for measuring the shape of the polishing pad mounted onthe polishing tool; pad machining control means for, while acquiringdata indicating a relationship between a dressing position defined bythe distance between a rotating shaft of the polishing pad and arotating shaft of the dresser and shape change of the polishing padbased on input of a polishing pad target shape and alternatingrepetition of polishing pad dressing by the dresser and polishing padshape measurement by pad shape measurement means at a stage prior tocommencement of a series of polishing steps for continuously polishing aplurality of polishing target objects by the polishing tool, machiningthe polishing pad to the target shape while controlling the dressingposition; and dressing position setting means (for example, polishingcontrol unit 60 of the embodiments) for setting the dressing positionduring the polishing steps based on a processing result of this data.

Here, it is preferable that aforementioned dressing position settingmeans, based on data illustrating the relationship between dressingposition and polishing pad shape change, obtain a dressing position atwhich the undulation displacement speed of change of the polishing padis approximately zero and use this dressing position as a criterion toset a dressing position at which polishing pad shape change isminimized. In addition, it is preferable that the aforementionedpolishing apparatus comprise pad type detection means (for example, padtype discrimination protrusions 13 a of the polishing pad 13 and padshape measurement instrument 20 of the embodiments) for detecting a typeof the polishing pad mounted on the polishing tool, and polishingcondition setting means (for example, polishing control unit 60 of theembodiments) for setting polishing conditions of the polishing targetobject in accordance with the polishing pad type detected by pad typedetection means. The undulation displacement referred to here is a valueobtained by multiplying the distance from the inner diameter to theouter diameter of the polishing pad and a supplement of the conicalvertical angle of the surface of the polishing pad.

In this polishing apparatus a step for machining the polishing pad to apreestablished target shape is automatically performed at a stage priorto commencement of a series of polishing steps for continuouslypolishing a plurality of polishing target objects by the polishing tooland, unlike in the prior art, because of the absence of a step fordressing and finishing a polishing pad to a target shape performed by anoperator on the basis of trial and error, polishing pad shape adjustmentcan be implemented in a short time and the throughput of the polishingsteps as a whole can be improved.

Another polishing apparatus pertaining to the present invention forpolishing the surface of a polishing target object by a polishing toolon which a polishing pad is mounted comprises: pad type detection meansfor detecting the polishing pad type mounted on the polishing tool, andpolishing condition setting means for setting polishing conditions ofthe polishing target object in accordance with the polishing pad typedetected by pad type detection means.

In addition, it is preferable that the aforementioned polishingapparatus pertaining to the present invention comprises processoperation means (for example, process operation unit 70 of theembodiments) for performing process operations such as conveyance of thepolishing target object and the polishing pad, and monitoring controlmeans (for example, monitoring control unit 62 of the embodiments) formonitoring the progress state of the polishing steps and executing anactuation control of process operation means in accordance with theprogress state of the polishing steps.

In this polishing apparatus the polishing pad type is automaticallydiscriminated and the conditions (for example, various conditions duringpolishing such as the relative movement speed and polishing time and soon of the polishing pad with respect to the polishing target object) forpolishing the polishing target object in response thereto areautomatically set and, unlike in the prior art, because of the absenceof a step based on discrimination of polishing pad type and so on by anoperator and setting polishing conditions in response thereto, thethroughput of the polishing steps as a whole can be improved.

A further polishing apparatus pertaining to the present invention whichcomprises a polishing tool on which a polishing pad is mounted and apolishing target object holding means (for example, rotating support 40of the embodiments) for holding a polishing target object and whichpolishes the surface of the polishing target object as a result of arelative movement of the polishing tool and polishing target objectholding means with the polishing pad in a state of contact with thepolishing target object held by polishing target object holding means,comprises: a dresser for dressing the polishing pad as a result of arotated dressing surface thereof being brought into contact with thesurface of the polishing pad mounted on the polishing tool; pad shapemeasurement means (for example, pad shape measurement instrument 20 ofthe embodiments) for measuring the shape of the polishing pad mounted onthe polishing tool; dressing control means (for example, polishingcontrol unit 60 of the embodiments) for dressing the polishing pad bythe dresser in an intermediate process in a series of polishing stepsfor continuously polishing a plurality of polishing target objects by apolishing tool every time polish of one or a plurality of polishingtarget objects is completed; and dressing position control means (forexample, measurement control unit 61 and polishing control unit 60 ofthe embodiments), in use of pad shape measurement means, for measuringthe shape of the polishing pad every time polish of a predeterminednumber of polishing target objects is completed, and controlling thedresser position with respect to the polishing pad so that the shape ofthe polishing pad obtained by the shape measurement of the polishing padapproaches a preestablished polishing pad target shape.

It is preferable that this polishing apparatus comprises processoperation means (for example, process operation unit 70 of theembodiments) for performing process operations such as conveyance of thepolishing target object and the polishing pad, and monitoring controlmeans (for example, monitoring control unit 62 of this embodiment) formonitoring the progress state of the polishing steps and executing anactuation control of process operation means in accordance with theprogress state of the polishing steps.

In this polishing apparatus the step for machining the polishing pad toa preestablished target shape is automatically performed as anintermediate process in a series of polishing steps for continuouslypolishing a plurality of polishing target objects by a polishing tooland, unlike in the prior art, because of the absence of a step forfinishing to a target shape based on the polishing steps beinginterrupted and then the polishing pad being dressed by an operator onthe basis of trial and error with the polishing steps of the polishingapparatus being interrupted, the polishing pad shape adjustment can beperformed in a short time and the throughput of the polishing steps as awhole can be improved.

The method of manufacturing a semiconductor device pertaining to thepresent invention comprises a step for smoothing the surface of asemiconductor wafer that serves as the polishing target object employingthe polishing apparatus pertaining to the present invention.Furthermore, the semiconductor device of the present invention ismanufactured in according to the abovementioned semiconductor devicemanufacturing method.

Because this method of manufacturing a semiconductor device employs thepolishing apparatus pertaining to the present invention in the step forpolishing the semiconductor wafer, the throughput of the steps forpolishing the semiconductor wafer is improved, and the semiconductor canbe manufactured at lower cost than by a conventional method ofmanufacturing a semiconductor device. In addition, because thesemiconductor device pertaining to the present invention is manufacturedby the method of manufacturing a semiconductor device pertaining to thepresent invention, a low cost semiconductor device is produced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram of the configuration of anembodiment of the polishing apparatus pertaining to the presentinvention;

FIG. 2 is a diagram showing the relationship between dressing positionand polishing pad shape, (A) shows a case where the dressing position islarger than the shape-keep position, (B) shows a case where the dressingposition is equal to the shape-keep position, and (C) shows a case wherethe dressing position is smaller than the shape-keep position;

FIG. 3 is a flow chart of the sequence for setting the polishingapparatus dressing conditions;

FIG. 4 is a diagram showing a configuration of a pad type detectionmeans for detecting polishing pad type;

FIG. 5 to FIG. 8 are block diagrams illustrating dressing positioncontrol;

FIG. 9 is a flow chart of the polishing apparatus polishing sequence;and

FIG. 10 is a flow chart showing an example of the method ofmanufacturing a semiconductor device pertaining to the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be hereinafterdescribed with reference to the drawings. FIG. 1 shows a polishingapparatus 1 pertaining to an embodiment of the present invention. Thepolishing apparatus 1 is configured from, in addition to a polishingtool 10 for polishing a polishing target object, a dresser 30 fordressing a polishing pad 13 mounted on the polishing tool 10, a rotatingsupport 40 for holding the polishing target object, a pad shapemeasurement instrument 20 for measuring the shape of the polishing pad13 and a process operation unit 70 for performing process operationssuch as conveyance of the polishing target object or polishing pad 13,control units for executing the operating control thereof (polishingcontrol unit 60, measurement control unit 61, monitoring control unit62). In addition, the polishing apparatus 1 comprises three operatingstations, that is, a pad shape measurement station ST1, a dressingstation ST2 and a polishing station ST3, the polishing tool 10 beingable to be moved between the three operating stations ST1, ST2 and ST3.In the description that follows the polishing target object is taken tobe a semiconductor wafer, and the polishing apparatus 1 is taken to be aCMP apparatus for chemo-mechanical polishing the surface of thesemiconductor wafer.

The polishing tool 10 comprises a rotating shaft 11 extending in thevertical direction, and a tool main body 12 mounted on a lower end partof this rotating shaft 11, the aforementioned polishing pad 13 beingaffixed to a plate 14 using a double-sided tape or the like whereby theplate 14 and polishing pad 13 are integrally operated. The plate 14 isvacuum-suctioned onto the tool main body 12 so that the polishing pad13, together with the plate 14, is replaceably mounted. The polishingpad 13 is configured from a foamed polyurethane or the like of, forexample, a simple disc shape or a thin donut-like shape with a hole inthe center. In this embodiment, the polishing pad 13 is taken to have athin donut-like shape (see FIG. 2). The rotation control of the rotatingshaft 11 of the polishing tool 10 is executed by way of a motor notshown in the diagram, the drive control of this motor being performed bythe polishing control unit 60.

The pad shape measurement station ST1 constitutes an operating stationat which measurement of the shape of the polishing pad 13 is performed,and the pad shape measurement instrument 20 is able to be positionedbelow the polishing tool 10 moved to the pad shape measurement stationST1. The pad shape measurement instrument 20 is configured from a sensorsupporting part 21 and a sensor 22 supported by this sensor supportingpart 21, the sensor 22 being movable in the horizontal plane withrespect to the sensor supporting part 21. The sensor 22 is configuredfrom an optical (that is to say, noncontact-type) displacement sensorcomprising a photoemitting element and photoreceiving element and,reflecting an emitted light spot on a measurement position on thepolishing pad 13, is able to measure the distance between the pad shapemeasurement instrument 20 and the measurement position on the polishingpad 13 from position shift of a reflection spot of this light.Accordingly, the relative height of different displacement positions onthe polishing pad 13 can be calculated using this pad shape measurementinstrument 20. Moreover, while the sensor 22 of the embodiments is takento be an optical displacement sensor this is an exemplary example onlyand, while as a noncontact-type sensor an ultrasonic-type displacementsensor or the like may be used while, as a contact-type sensor aprobe-employing sensor or the like may be used. The relative movementcontrol of the sensor 22 with respect to the sensor supporting part 21is performed by way of a motor not shown in the diagram, the drivecontrol of this motor being performed by the polishing control unit 60and measurement control unit 61 linked therewith. In addition, shapemeasurement data of the polishing pad 13 produced by the sensor 22 issent from the measurement control unit 61 to the polishing control unit60.

The dressing station ST2 constitutes an operating station where thepolishing pad 13 is dressed, and the dresser 30 is able to be positionedbelow the polishing tool 10 moved to the dressing station ST2. Thedresser 30 is configured from a rotating shaft 31 extending in thevertical direction (that is to say, in parallel with the rotating shaft11 of the polishing tool 10) and a disc-shaped dressing plate 33 mountedby way of a thimble mechanism 32 to an upper part of the rotating shaft31, the upper surface of the dressing plate 33 forming the dressingsurface. The rotation control of the rotating shaft 31 of the dresser 30is performed by way of a motor not shown in the diagram, the drivecontrol of this motor being performed by a polishing control unit 60.The dresser 30 dresses the surface of the polishing pad 13 by polishingthe surface of the polishing pad 13 mounted on the polishing tool 10and, whenever a plurality of semiconductor wafers W are to be polishedat the-later described polishing station ST3, the polishing tool 10 ismoved to the dressing station ST2, after which the upper surface(dressing surface) of the rotated dressing plate 33 is brought intocontact (pushed against) the polishing pad 13 of the rotated polishingtool 10 and the polishing pad 13 is dressed. In addition, apart fromsharpening the polishing pad 13 as described above, the object ofdressing the polishing pad 13 is to machine the shape of the polishingpad 13 to a predetermined shape and, accordingly, in addition beingperformed at a stage prior to a series of polishing steps forcontinuously polishing a plurality of semiconductor wafers W beingstarted, this dressing is performed a plurality of times as anintermediate process in these polishing steps. Here, the distancebetween the rotating shaft 11 of the polishing tool 10 and the rotatingshaft 31 of the dresser 30 can be accurately controlled by the polishingcontrol unit 60 and, as will be described later, the polishing pad 13can be finished to the desired shape in accordance with this distance.The distance between the rotating shaft 11 of the polishing tool 10 andthe rotating shaft 31 of the dresser 30 is hereinafter referred to asthe dressing position P (see FIG. 2).

The polishing station ST3 constitutes an operating station where thepolishing tool 10 is employed to polish the surface of a semiconductorwafer W, the rotating support 40 being able to be positioned below thepolishing tool 10 moved to the polishing station ST3. The rotatingsupport 40 comprises a rotating shaft 41 extending in the verticaldirection (that is to say, in parallel with the rotating shaft 11 of thepolishing tool 10) and a rotating plate 42 fixed to an upper part of therotating shaft 41, the rotating plate 42 being able to be rotated in thehorizontal plane as a result of the rotation of the rotating shaft 41. Avacuum suction chuck mechanism not shown in the diagram is provided onthe upper surface of the rotating plate 42, and the semiconductor waferW can be vacuum-suctioned onto the rotating plate 42 by this vacuumchuck suction mechanism. Both the rotational control of the rotatingshaft 41 and the oscillation control thereof are performed by way ofmotors not shown in the diagram, the drive control of these motors beingexecuted by the polishing control unit 60. In addition, both therotating support 40 and the polishing tool 10 are rotated with thepolishing pad 13 having been brought into contact with the surface ofthe semiconductor wafer W from above, the polishing being performed onthe entire surface of the semiconductor wafer W by an oscillating motionof the polishing tool 10 with respect to the rotating support 40 in thehorizontal direction.

The process operation unit 70 is configured from a robot arm forconveying the semiconductor wafer W serving as the polishing targetobject and the polishing pad 13, and a slurry supply device (not shownin the diagram) for supplying a slurry to the surface of thesemiconductor wafer W to be polished. In addition, the monitoringcontrol unit 62 monitors the progress state of the (later-described)polishing steps of the semiconductor W performed by, for example, thepolishing control unit 60, and executes an actuation control of theprocess operation unit 70 in accordance with the progress state of thesepolishing steps.

First Example

A first embodiment of the present invention will be hereinafterdescribed. In this first embodiment, the steps for polishing thesemiconductor wafer W by the polishing apparatus 1 of the configurationdescribed above are performed in the sequence: (1) polishing pad 13mounted on the polishing tool 10 by the process operation unit 70→(2)polishing pad 13 machined (dressed) by the dresser 30→(3) semiconductorwafer W carried in by the process operation unit 70 and mounted on therotating support 40→(4) polishing pad 13 dressed by the dresser 30→(5)semiconductor wafer W machined by the polishing pad 13→(6) semiconductorwafer W removed from the rotating support 40 and carried out by theprocess operation unit 70→(3)→(4)→(5)→(6)→(3)→ . . . . While thispolishing apparatus 1, as is described above, comprises a step formachining the polishing pad 13 provided in the polishing tool 10(aforementioned Step (2)) prior to a series of polishing steps forcontinuously polishing the plurality of semiconductor wafers W by thepolishing tool 10 being started, this polishing apparatus performs thestep for machining the polishing pad 13 automatically, and this stepwill be hereinafter described in detail.

First, the possible polishing pad 13 shapes will be described. The shapeof the polishing pad 13 has a significant effect on the polished stateof the semiconductor wafer W that serves as the polishing target object,and three specific shape types, that is, a projecting conical shape inwhich the center portion projects downward from the perimeter portion(see FIG. 2(A)), a smooth shape in which the surface as a whole is flat(smooth) (see FIG. 2(B)), and a recessed conical shape in which thecenter portion depresses upward from the perimeter portion (see FIG.2(C)) may be produced.

The shape of the polishing pad 13 is not able to be definitivelydetermined by the distance between the rotating shaft 11 of thepolishing tool 10 and the rotating shaft 31 of the dresser 30, that isto say, by the dressing position P. For this reason, the operatorperforms a shape adjustment based on trial and error. The characterizingfeature of a polishing pad 13 dressed (polished) in a state in which thedressing position P constitutes a single particular predetermined valuePv as shown in FIG. 2(B) is that the shape of the polishing pad 13 doesnot change. Here, the dressing position P at which the shape change ofthe polishing pad 13 is a minimum is referred to as the “shape-keepposition Pv” and, while in a state in which the dressing position P islarger than the shape-keep position Pv (P>Pv) the projecting shape ismore pronounced as shown in FIG. 2(A), in a state in which the dressingposition P is smaller than the shape-keep position Pv (P<Pv) therecessed shape is more pronounced as shown in FIG. 2(C). In other words,while the undulation shape speed of change of the polishing pad 13 is 0at the shape-keep position Pv, at P>Pv a projected shape (+) is advanceand at P<Pv a recessed shape (−) is advanced. A different valueshape-keep position Pv is produced in accordance with characteristicssuch as hardness and shape of the polishing pad 13, and shape and meshcoarseness (denier) of the dresser 30 (dressing plate 33).

In addition, because the dressing position P can be expressed employinga shift amount ∈ from the shape-keep position Pv as:

P=Pv+∈  (A1),

the shape of the polishing pad 13 can be expressed as ∈=0 when the shaperemains unchanged, as ∈>0 when a projecting conical shape is advanced,and as ∈<0 when a recessed conical shape is advance (see FIG. 2).

Here, the shape of the polishing pad 13 desired by the operator isreferred to as the “target shape”. The target shape denotes apredetermined surface undulation state, a predetermined break-in amount,or a predetermined groove depth range. In addition, expression of targetshape necessitates stipulation of not only the value of an undulationdisplacement δ as shown in FIG. 2 for defining shape undulation as anumerical value, but also pad thickness th and groove depth d. Theundulation displacement δ is a value obtained by multiplying adifference length L of the inner diameter and outer diameter of thepolishing pad 13 by a supplementary angle θ of a conical vertical angleobtained by conical-shape approximation of the surface of the polishingpad 13. The supplementary angle θ is a very small value and, therefore,can be established in the aforementioned calculation by multiplicationalone without need to employ a trigonometric function. Accordingly, thetarget shape is established in the same way as the undulationdisplacement δ target value, the undulation displacement δ valueestablished correspondent to the target shape being hereinafter referredto in the description as the “target undulation displacement δT”. Thedifference in target shape undulation can be discriminated on the basisof the polarity of the target undulation displacement δT and, therefore,the desired target shape can be stipulated by the sign of the targetundulation displacement δT alone. More specifically, when δT>0 thestipulated target shape is a projecting conical shape, when δT=0 thestipulated target shape is a smooth shape, and when δT<0 the stipulatedshape is a recessed conical shape. The pad thickness th is the averagedistance from the surface position of the polishing pad 13 to thesurface of the polishing pad 13 mounted on the plate 14. The groovedepth d is the average depth of these grooves.

In order to produce a particular target undulation displacement δT anundulation amount difference from an existing undulation displacement δmust be determined. The relationship between the amount of change perunit time of the undulation displacement δ and the shift amount e withrespect to the previous shape-keep position Pv is essentially linearand, therefore, a sum of the shift amount ∈ and the dressing time isequivalent to the undulation amount to be machined. The polishing pad 13can be machined to the target shape by properly controlling this shiftamount ∈ and dressing time. However, determination of the shift amount ∈necessitates that the shape-keep position Pv be already known. Theactualization means thereof involves the dressing shape-keep position Pvin which, while acquiring data pertaining to the indicating therelationship between the dressing position P and shape change(undulation displacement change amount) of the polishing pad 13 throughalternating repetition of polishing pad 13 dressing by the dresser 30and polishing pad 13 shape measurement by pad shape measurement means20, the dressing shape-keep position Pv can be machined to the targetundulation displacement δT as the dressing shape-keep position Pv isestimated. Simultaneously, the dressing position for polishing a nextsemiconductor wafer W can be set to the previous shape-keep position Pvand the target undulation displacement δ T can be constantly maintained.

While various methods for estimating the shape-keep position Pv havebeen considered, in this embodiment a method of inferring the shape-keepposition Pv from the difference between the shape measurement value ofan existing polishing pad 13 by the pad shape measurement instrument 20and a previous shape measurement value is employed. This will behereinafter described in detail.

As is described above, while the target shape of the polishing pad 13may be any of either a projecting conical shape shown in FIG. 2(A), asmooth shape shown in FIG. 2(E) and a recessed conical shape shown inFIG. 2(C), if the polishing pad 13 is dressed with the dressing positionP of the dresser 30 having been set to a position (Pv+∈₀) obtained byaddition of a particular shift amount ∈₀ to the shape-keep position Pv,when ∈₀=0 the shape of the polishing pad 13 following dressing will beidentical to the pre-machined shape, when ∈₀>0 a conical shapeprojecting from the pre-machined shape will be formed, and when ∈₀<0 aconical shape recessed from the pre machined shape will be formed.

As is described above, while if the shape-keep position Pv of thedresser 30 is known the undulation shape change amount can be stipulatedby the dresser 30 being moved a shift amount ∈₀ only using theshape-keep position Pv as a criterion and a dressing being performed fora predetermined dressing time, because the shape-keep position Pv valueis in reality unclear, the position of the shape-keep position Pv mustfirst be roughly ascertained. For this purpose, firstly the dresser 30is set to the dressing position P estimated as being the shape-keepposition Pv (in reality, P=Pv+∈), after which dressing is performed fora predetermined dressing time Td, an undulation displacement δ speed ofchange dδ/dt (=V_(δ)) of the polishing pad 13 generated by this dressingbeing calculated from the following equation:

V _(δ) =dδ/dt=E _(δ) /Td  (A2)

E_(δ) denoting the undulation displacement difference before and afterdressing.

Here, the dressing of the polishing pad 13 by the dresser 30 and themeasurement of the undulation displacement δ of the polishing pad 13before and after this dressing are automatically performed by a movementand rotational control of the polishing tool 10, a rotational control ofthe dresser 30, and an actuation control of the pad shape measurementinstrument 20 executed by the polishing control unit 60 and themeasurement control unit 61.

A proportional relationship is known to exist between the undulationdisplacement δ speed of change V_(δ) calculated by the above-notedequation (A2) and the shift amount ∈ from the shape-keep position Pvand, therefore, taking the proportional constant thereof as K_(∈) and,employing K_(∈) and ∈, V_(δ) can be expressed as:

V ₆₇ =K _(∈)×∈  (A3)

The proportional constant K_(∈) constitutes an experientially set(provisional) value and, in addition, as it is already known that theundulation displacement speed of change V_(δ) of the polishing pad 13constitutes a value obtained (actually measured) in accordance with theshape measurement of the polishing pad 13, the value of the shift amount∈ can be calculated from the shape-keep position Pv using these twovalues and transforming the above-noted equation (A3) as follows:

∈=V _(δ/) K _(∈)  (A3)′.

Once the shift amount ∈ has been calculated, the shape-keep position Pvcan be obtained by transforming the above-noted equation (A1) asfollows:

Pv=P−∈  (A1)′

While an accurate shape-keep position Pv can be obtained from equation(A1)′ provided the set (provisional) proportional constant K_(∈)constitutes a dispersion-free value (in other words an accurate value),in reality the proportional constant K_(∈) normally possesses dispersionand, as a result, the shape-keep position Pv obtained in this way is notnecessarily accurate. Accordingly, the shape-keep position Pv obtainedusing this calculation is only ever regarded as a provisional value, andis hereinafter referred to as the “provisional shape-keep position Pv′”.

Once the provisional shape-keep position Pv′ has been obtained in themanner described above, the (previously described) shift amount ∈₀ thatensures the target undulation displacement δT generated by dressing forthe dressing time Td is able to be produced is able to be obtained inaccordance with the shape measurement of the polishing pad 13, and adressing position (hereinafter referred to as a “control dressingposition”) Pc for shape measurement is able to be calculated from theequation:

Pc=Pv′+∈ ₀  (A4)

established by replacing the above-noted equation (A1) with P=Pc, Pv=Pv′and ∈=∈₀.

Here, an undulation displacement δ=δ(t) of the polishing pad 13 isexpressed by integrating the two sides of the equation:

dδ/dt=K _(∈)×∈  (A5)

produced from the above-noted equation (A2) and equation (A3) as:

δ(t)=K _(∈) ×∈×t+C  (A6)

(C is a constant of integration) and, taking δ=δ(0) when t=0, C=δ(0) isestablished and equation (A6) can be rewritten as:

δ(t)=K _(∈) ×∈×t+δ(0)  (A7).

Assuming the undulation displacement δ of the polishing pad 13 can beproduced at the control dressing position Pc (=Pv′+∈₀) obtained byadding the shift amount ∈₀ to the provisional shape-keep position Pv′ asthe target undulation displacement δT by dressing performed for thedressing time Td, the equation:

δT=K _(∈)×∈₀ ×Td+δ(0)  (A8)

can be obtained by inserting δ(t)=δT, ∈=∈₀ and t=Td in equation (A7)and, by transforming equation (A8), the shift amount ∈₀ can beestablished from the provisional shape-keep position Pv′ as:

∈₀=(δT−δ(0))/(K _(∈) ×Td)  (A8)′.

Because of the dispersion that the set proportional constant K_(∈)possesses as described above, an accurate shape-keep position Pv cannotbe determined by a single dressing measurement result alone.Accordingly, an additional dressing measurement is performed using thecontrol dressing position Pc obtained in equation (A4) as the newdressing position P whereupon, employing the plurality of dressingmeasurement results (dressing measurement results for a plurality ofdressing positions P) obtained in this way, the most probable value, asproduced by statistical processing, can be determined as the trueshape-keep position Pv.

An example method of statistical processing for determining theshape-keep position Pv is based on an assumption of linear recurrence inthe relationship between the plurality of dressing positions P obtainedby the plurality of dressing measurements and V_(δ)(=dδ/dt) andcalculation of a recurrence coefficient thereof, and then obtaining theintercept of the dressing position P at which V_(δ) is approximatelyzero and determining this intercept as the shape-keep position Pv.Otherwise, an average value of a plurality of obtained shape-keeppositions Pv can be obtained and used to determine the actual shape-keepposition Pv. Furthermore, the shape-keep position Pv may be obtainedwith more probability based on a method that combines these two methods.The processing for determining the shape-keep position Pv using thesemethods involves the polishing pad 13 dressing conditions being set at astage prior to a series of polishing steps, the shape of the polishingpad 13 being able to be maintained to the predetermined undulationdisplacement by dressing the polishing pad 13 at the shape-keep positionPv set on the basis thereof.

The sequence in which the aforementioned dressing conditions are setwill be hereinafter described in detail with reference to the flow chartof FIG. 3. Here, the distance between the rotating shaft 11 of thepolishing pad 13 and the rotating shaft 31 of the dresser 30, that is tosay, the dressing position P, is expressed as P(n). The subscript (n) ofthis P(n) denotes the number of times that the polishing pad 13 isdressed and the number of times the shape thereof is measured in thestep for machining the polishing pad 13.

The sequence for setting the dressing conditions begins with a 1stdressing performed with the polishing tool 10 (that is to say, thepolishing pad 13) moved to the dressing station ST2 (Step S1). Thenumber of repetitions n of this 1st dressing is taken as n=1, and thedressing position P(1) at this time is an experientially producedaverage shape-keep position or an already pre-stored shape-keepposition. Here, this 1st the dressing time of this dressing is taken asfor a Td=T₁.

Upon completion of Step S1, the polishing tool 10 is moved to the padshape measurement station ST1 where the undulation displacement δ,thickness th and groove depth de of the polishing pad 13 are measured bythe pad shape measurement instrument 20 (Step S2). Here, the undulationdisplacement δ shown in FIG. 2 is a value obtained by multiplying adifference length L between the outer diameter and inner diameter of thepolishing pad 13 with a supplementary angle θ of a conical verticalangle obtained by conical approximation of the surface of the polishingpad 13. In addition, as shown in FIG. 2, the pad thickness thconstitutes a distance from the average surface position of thepolishing pad 13 to the surface of the polishing pad 13 mounted on thepolishing tool 10. In addition, the groove depth de of the polishing pad13 is defined as an average value of the depth d of all grooves of thepolishing pad 13 (see FIG. 2). Upon completion of the 1st dressing, theundulation displacement of the measured polishing pad 13 is taken as δ₁,the thickness of the polishing pad 13 is taken as th₁, and the groovethickness of the polishing pad 13 is taken as de₁.

Upon completion of Step S2, the number of repetitions n is taken as n=2and is set as an initial-state value (Step S3). Upon completion of StepS3, the dressing is performed n(=2) times. The dressing position at thistime is the same as that at the 1st dressing position P(1). In addition,taking the dressing time as Td=T₂, a sum dressing time ΣTd=T₁+T₂ iscalculated (Step S4). Here, because the dressing time is fundamentallymore easily understood as a fixed value, Td=T₁=T₂= . . . =Tn.Accordingly, the sum dressing time is obtained as δTd=n×Td.

Upon completion of Step S4, the polishing tool 10 is moved to the padshape measurement station ST1 and the undulation displacement δ,thickness th and groove depth de of the polishing pad 13 are measured bythe pad shape measurement instrument 20 (Step S5). Following completionof this n(2)^(th) dressing, the undulation displacement of the measuredpolishing pad 13 is taken as δ₂, the thickness of the polishing pad 13is taken as th₂, and the groove thickness of the polishing pad 13 istaken as de₂.

Upon completion of Step S5, the provisional shape-keep position Pv′ ofthe dresser 30 is calculated (Step S6). For this purpose, a Changeamount E_(δn)=δ_(n-)δ_(n-1) of the undulation displacement of thepolishing pad 13 is firstly obtained. Here, n=2 and, accordingly,E_(δ2)=δ₂−δ₁. Once E_(δ2) has been obtained, the undulation displacementδ speed of change V_(δ) can be obtained from this E_(δ2) and thedressing time Td employing the above-noted equation:

V _(δ) =dδ/dt=E _(δ) /Td  (A2)

and the shift amount E from the shape-keep position Pv can be obtainedfrom the above-noted equation:

∈=V _(δ) /K _(∈)  (A3)′.

Once the shift amount ∈ has been obtained in this way, the provisionalshape-keep position Pv′ can be obtained from the above-noted equation(A1)′ using the equation:

Pv′=P(n)−∈  (1).

Accordingly, for example, when P₁₌100(mm), P₂=100(mm), Td=1(min),K_(δ)=10(μm/min)/(mm), δ₁=0(μm) and δ₂=5(μm), the shift amount ∈ isestablished from E_(δ2)=δ₂−δ₁ as ∈=((5−0)/1)10=0.5(mm). Because, at thistime, the shift amount ∈ has a positive polarity, the value of theprovisional shape-keep position Pv′ is smaller than the dressingposition P₂ by an amount of 0.5(mm). Accordingly, the provisionalshape-keep position Pv′ in this (n=2) example is established as:

Pv′=P ₂−∈=100−0.5=99.5(mm).

Upon completion of Step S6, the control dressing position Pc iscalculated with n=n+1 (Step S7). Replacing Pc→P(n+1) in the above-notedequation (A4), the control dressing position Pc can be expressed as:

P(n+1)=Pv′+∈ ₀  (2).

In addition, from the above-noted two equations (1) and (2) it can alsobe expressed as:

P(n+1)=P(n)−∈+∈₀  (3).

Here, n=2. In addition, the shift amount ∈₀ from the above-notedequation is:

E ₀=(δT−δ(0))/(K _(∈) ×Td)  (A8)′

and, for example, when δ(0)=δ₂=5(μm), because δT=−1(μm) (the value ofthe target undulation displacement δT is preinput into a control unit,for example, the polishing control unit 60 of the polishing apparatus1), a shift amount ∈₀ from the provisional shape-keep position Pv′ of:

∈₀=(−1−5)/(10×1)=−0.6(mm)

is established. In addition, the control dressing position P(n+1) (here,n+1=3) is established from the above-noted equation (3) as:

P ₃=99.5+(−0.6)=98.9(m).

Once the control dressing position Pc has been obtained in this way, thedressing position P of the dresser 30 is set to the control dressingposition Pc and the polishing pad 13 is dressed for the dressing timeTd. Thereafter, the thus-obtained undulation displacement δ speed ofchange V_(δ)(=dδ/dt) of the polishing pad 13 is calculated and stored asdressing position P and V₆ relationship data, and steps from Step S4 toStep S7 are repeated employing the newly obtained provisional shape-keepposition Pv′ and the next control dressing position Pc values. Inaddition, although not indicated in FIG. 3, the provisional shape-keepposition Pv′ at this time is stored as data. In the course of thisprocess, the control dressing position Pc is converged to a particularvalue, and the thus-converged value serves as the actual shape-keepposition Pv. However, in true dressing measurement, a control dressingposition Pc not converged to a particular value is sometimes exhibitedbecause of measurement error and so on and the dispersion present in theproportional constant K_(δ). This implies that the provisionalproportional constant K_(δ) is inappropriate and, in this case, thecontrol dressing position Pc can be converged by multiplying the shiftamount ∈ from the measured shape-keep position Pv and the shift amount∈₀ from the provisional shape-keep position Pv′ by the correctioncoefficients H₁, H₂ as in equations (4) and (5) noted below:

∈′=H ₁×∈  (4)

∈₀ ′=H2×∈₀  (5).

Merging equations (4) and (5) with the above-noted equation (3), thecontrol dressing position P(n+1) may be expressed as:

P(n+1)=P(n)−∈′+∈₀′  (6).

Here, each of the aforementioned correction coefficients H₁, H₂ ispreferably no more than 1.

Upon completion of Step S7, judgments as to whether or not the stepsfrom Step S4 to Step S7 are to be repeated are made (Steps S8 to StepS10). For this purpose, first, a judgement as to whether or not theundulation displacement δ is within a predetermined permissible rangewith respect to the target undulation displacement δT is made (Step S8).More specifically, taking the minimum limit value of the permissiblerange of the target undulation displacement δT as δT⁽⁻⁾ and the maximumlimit value as δT⁽⁺⁾, a judgment of whether or not δ(n) satisfies theequation:

δT ⁽⁻⁾≦δ(n)≦δT ⁽⁺⁾  (7)

is made. Here, for example, when δT is δT=−1(μm) as described above, theminimum limit value δT⁽⁻⁾ and maximum limit value δT⁽⁺⁾ for the targetundulation displacement δT are δT⁽⁻⁾=−4(μm), δT⁽⁻⁾=2 (μm) respectivelytaking the permissible range of the target undulation displacement δT asδT±3 (μm) and, therefore, a judgment of whether or not the measuredundulation displacement δ (n) satisfies the equation:

−4≦δ(n)≦2

at this time is made. Thereafter, if the measured undulationdisplacement δ (n) satisfies (judgment is Yes) the above-noted equation(7) the process advances to the next Step S9 and, if it does not satisfy(judgment is No) equation (7), the process returns to Step S4. In theexample noted above, because the undulation displacement of the measuredpolishing pad 13 is δ₂=5(μm), the process returns to Step S4 and thepolishing pad 13 dressing is continued. The dressing position P of thedresser 30 set at this time constitutes, as described above, a controldressing position P(n+1) obtained from the above-noted equation (6).That is to say, if both the above-noted correction coefficients H₁ andH₂ are 1, the n=3^(rd) dressing position P of Step S4 is the P₃=98.9(mm) obtained in the manner described above.

When the judgment in Step S8 is Yes, a judgment of whether or not a nextshave amount Bn of the polishing pad 13 is equal to or more than atarget shave amount ET is made (Step S9). Here, the shave amount Bn ofthe polishing pad 13 refers to the amount scraped off the polishing pad13. A judgment of whether or not the shave amount Bn of the polishingpad 13 is equal to or greater than the target shave amount is madebecause, when the polishing pad 13 is polished, a certain amount of thesurface layer of the polishing pad 13 must be scraped off to affordcompatibility between the polishing pad 13 and the semiconductor waferW. Because the n^(th) shave amount Bn is expressed as the differencebetween the thickness thn of the polishing pad 13 at the n^(th)measurement and the thickness th₁ of the polishing pad 13 at the 1stmeasurement as:

Bn=thn−th ₁  (8),

when the n^(th) shave amount Bn of the polishing pad 13 satisfies(judgment is Yes) the equation:

Bn≧BT  (9),

the shave amount Bn of the polishing tool 10 is assumed to be at leastthe target shave amount BT and the process advances to Step S10 and, ifit does not satisfy equation (9) (judgment is No), the shave amount Bnof the polishing pad 13 is assumed to be less than the target shaveamount BT and the process returns to Step S4.

When the judgment in Step S9 is Yes, a judgment of whether or not theundulation displacement speed of change V_(δ)(=dδ/dt=E_(δn)/Tn) of thepolishing pad 13 is equal to or less than the target speed of changeV_(δT) is made (Step S10). More specifically, a judgment of whether ornot the V_(δ) obtained employing the displacement amountE_(δn)−δ_(n)−δ_(n-1) of the undulation displacement of the polishing pad13 obtained in Step S6 satisfies the following equation:

V _(δ) ≦V _(δT)  (10)

is made. Here, the V_(δ) that satisfies equation (10) serves as anindicator that the existing dressing position P(n) is close to the truedressing position Pv. Thereafter, when V_(δ) satisfies (judgment is Yes)equation (10), the process advances to the next Step S11, and if it doesnot satisfy (judgment is No) equation (10), the process returns to StepS4.

While judgments as to whether or not the steps from Step S4 to Step S7are to be repeated is made on the basis of the three judgment criteriaof Step S8 to Step S10 in this way, the judgment criteria need not berestricted to the three criteria described above. For example, if allthree judgment criteria for from Step S8 to Step S10 cannot be clearedand only the number of repetitions n is increased, the upper limit valueof n may be prestipulated and, provided at least one criterion can becleared, the process can advance to the next Step S11.

In Step S11 the (true) shape-keep position Pv of the dresser 30 isdetermined. The shape-keep position Pv is determined at a stage when aplurality of measurement data (plurality of control dressing positionsPc) have been acquired as described above and the judgment criteria ofSteps S8 to Step S10 have been satisfied. The method for the calculationthereof is performed in accordance with the method described above. Todetermine the shape-keep position Pv, the original data selectioncriteria employed for this determination may be provided. For example,data at which the undulation displacement speed of change V_(δ) of thepolishing pad 13 is a particular criterion value or below alone may beselected, or data within a particular range of the target undulationdisplacement δT alone may be selected.

Upon completion of Step S11, the polishing pad 13 is dressed at theshape-keep position Pv obtained in Step S11 (Step S12). Upon completionof Step S12, the polishing tool 10 is moved to the pad shape measurementstation ST1, and the undulation displacement δ (n) of the polishing pad13 and thickness thn and groove depth den of the polishing pad 13 arecalculated (Step S13).

Upon completion of Step S13, a judgment of whether or not Steps S4 toS13 is to be repeated is made (Step S14). More specifically, theundulation displacement change amount E_(δn)=δ_(n)−δ_(n-1) of thepolishing pad 13 is obtained to calculated the speed of changeV_(δ)(=dδ/dt=E_(δn)/Tn), and a judgment of whether or not the speed ofchange V_(δ) is equal to or less than the target speed of change V_(δT),that is to say, whether or not V_(δ) satisfies the following equation:

V _(δ) ≦V _(δT)  (11)

is made. In this judgment if V_(δ) satisfies (judgment is Yes) theabove-noted equation (11) the process advances to Step S15 and, if itfails to satisfy (judgment is No) equation (11), the process returns toStep S16. In the judgment made in the aforementioned Step S14, thetarget speed of change V_(δT) value may be altered to that of Step S10.

In Step S15, the shape-keep position Pv determined in Step S11 is set(or updated) as a polishing apparatus 1 dressing condition. In addition,a dressing rate Rd is calculated from the equation:

Rd=Bn/ΣTd  (12).

This dressing rate Rd is stored as an apparatus constant of thepolishing apparatus 1 and is employed as a parameter in subsequentpolishing steps for evaluating the need for the dresser 30 to bereplaced. The step for setting the dressing conditions is completed inStep S15.

On the other hand, in Step S16 and the subsequent Step S17, processingsidentical to the processings of Step S6 and Step S7 described above areperformed, after which the process returns to Step S4. A retry-count maybe carried out and, when this retry count exceeds a stipulated number,an error will be judged to have occurred and the dressing conditionsetting sequence will be forcibly terminated.

While the dressing conditions is thus completed, in this polishingapparatus 1, information pertaining to the end mode of theabove-described dressing condition setting sequence, that is to say,whether the sequence has ended normally (Step S15), or proceeded to aretry step (Step S16), or has ended in error as described above is sentto the monitoring control unit 62. The monitoring control unit 62actuates the process operation unit 70 normally upon receipt ofinformation to the effect that the dressing condition setting sequencehas ended normally and, upon receipt of information to the effect thatthe sequence has proceeded to the retry step or that the process hasended in error, it actuates the process operation unit 70 to performprocessing compliant with the particulars of the error. For example,upon receipt of information to the effect that the dressing conditionssetting sequence has proceeded to the retry step, because a step formachining the polishing pad 13 and, in turn, a step for polishing thesemiconductor wafer W are delayed, a command must be issued to theprocess operation unit 70 to stop a new semiconductor wafer W beingconveyed to the polishing apparatus 1.

Subsequent to the steps described above being implemented by polishingapparatus 1, the polishing pad 13 can be machined to the targetundulation displacement δ T and the target undulation displacement δTcan be maintained. Hence, preparation for polishing steps of thesemiconductor wafer W is completed.

Upon completion of the preparation for the polishing steps, the processoperation unit 70 is operated to convey the semiconductor wafer W intothe polishing station ST3 of the polishing apparatus 1 where it is heldon the upper surface of the rotating plate 42. The polishing tool 10 ismoved to the polishing station ST3 and, upon positioning thereof abovethe semiconductor wafer W, both the polishing tool 10 and rotatingsupport 40 are rotated. Once the rotation of both the polishing tool 10and the rotating support 40 is started, the polishing tool 10 is loweredand the polishing pad 13 is brought into contact with the semiconductorwafer W. As a result, a relative movement between the semiconductorwafer W and the polishing pad 13 is generated and the surface of thesemiconductor wafer W is polished. Furthermore, the polishing tool 10 isoscillatingly moved within the horizontal plane at this time to ensurethe entire surface of the semiconductor wafer W is uniformly polished.In addition, as the semiconductor wafer W is being polished, slurry issupplied to the contact surface between the semiconductor wafer W andthe polishing pad 13 by a slurry supply device not shown in the diagram(part of the process operation unit 70 as described above) which, inaddition to affording an improved polishing effect, removes the shavingstherefrom.

Incidentally, the polishing conditions set in the steps for polishingthe semiconductor wafer W as described above such as, for example, thevarious conditions including the rotational speeds of each of thepolishing tool 10 and the rotating support 40, the relative oscillatingspeed and oscillating width of the polishing tool 10, the magnitude ofthe pressure force and polishing time of the polishing tool 10 on thesemiconductor wafer W along with the slurry supply flow rate and supplyamount and so on must be individually set in accordance with thesemiconductor wafer W type (film type) serving as the polishing targetobject and the polishing pad 13 type being used and so on. Here, thepolishing pad 13 type employed for the polishing of the semiconductorwafer W is determined in accordance with the film type of thesemiconductor wafer W to be polished and, therefore, the polishing pad13 type can be determined once the semiconductor wafer W type (filmtype) is determined. Accordingly, if the polishing pad 13 type is knownthe semiconductor wafer W type (film type) serving as the polishingtarget object can also be determined and, as a natural outcome thereof,the required polishing conditions can also be determined. In thepolishing apparatus 1 of this embodiment, as shown in FIG. 4, pad typediscrimination protrusions 13 a comprising a (characteristic) undulationshape (concentric circular grooves or the like) correspondent to thepolishing pad 13 type is provided in the centre portion of the polishingpad 13 and, by measurement of the shape of the undulation portion (padtype discrimination protrusions 13 a) of the polishing pad 13 mounted onthe polishing tool 10 employing the pad shape measurement unit 20provided in the pad shape measurement station ST1 of the polishingapparatus 1, the polishing pad 13 type can be detected. The thusdetected information is sent by way of the measurement control unit 61to the polishing control unit 60. Various polishing condition dataestablished for each polishing pad 13 type are prestored in a storageunit not shown in the diagram of the polishing control unit 60, thepolishing control unit 60 setting the required polishing conditions onthe basis of information produced by the measurement control unit 61.

Here, the detection of the aforementioned polishing pad 13 type is notnecessarily limited to an assembly based on pad type discriminationprotrusions 13 a formed in the polishing pad 13 and the pad shapemeasurement unit 20 for measuring the shape thereof as illustrated inthis embodiment and, accordingly, other means may be employed. Forexample, replacing the undulation shape (pad type discriminationprotrusions 13 a) as described above provided in the polishing pad 13,the polishing pad 13 type may be detected by provision of an identifier(for example, concentric circular strip) possessing a characteristicreflectance correspondent to the polishing pad 13 type, and detection ofthe reflectance of this identifier by, for example, an optical pick-upor the like.

In addition, when the groove depth de of the polishing pad 13 isdetected as having reached a preset depth de₀ on the basis of groovedepth de information measured whenever polishing pad 13 dressing for apredetermined time Td has been completed, the polishing control unit 60assumes that the usage lifespan of the polishing pad 13 has expired andexecutes an operation control of the process operation unit 70 for thepolishing pad 13 to be replaced. After the polishing pad 13 is replaced,a step for machining the new polishing pad 13 is executed in accordancewith the sequence described above.

In addition, once completion of the polishing of a semiconductor wafer Whas been detected, the polishing control unit 60 issues a command to theprocess operation unit 70 for the polished semiconductor wafer W to becarried out of the polishing apparatus 1 and for the semiconductor waferW serving as the new polishing target object to be carried into thepolishing apparatus 1. The semiconductor wafer W polishing describedabove is repeated. When the new semiconductor waver W serving as thepolishing target object is carried in, prior to the start of thesemiconductor wafer W polishing, the polishing pad 13 is dressed(sharpened). It is preferable at this time for the dressing time to beinversely proportional to the calculated dresser 30 dressing rate Rd.

In this way, the polishing apparatus 1 pertaining to the presentinvention comprises pad machining control means (equivalent to thepolishing control unit 60 of this embodiment) for, while acquiring dataindicating the relationship between the dressing position P defined bythe distance between the rotating shaft 11 of the polishing pad 13 andthe rotating shaft 31 of the dresser 30 and shape change of thepolishing pad 13 based on input of the target shape of the polishing pad13 and alternating repetition of polishing pad 13 dressing by thedresser 30 and polishing pad 13 shape measurement by the pad shapemeasurement unit 20 at a stage prior to initiation of a series ofpolishing steps for continuously polishing a plurality of polishingtarget Objects (semiconductor wafers W) by the polishing tool 10,machining the polishing pad 13 to the target shape while controlling thedressing position P, and dressing position setting means (equivalent tothe polishing control unit 60 of this embodiment) for setting thedressing position P during the polishing steps based on a processingresult of the aforementioned data.

By virtue of the polishing apparatus 1 pertaining to the presentinvention having the aforementioned configuration the step for machiningthe polishing pad 13 to the predetermined target shape is automaticallyperformed and, unlike in the prior art, because of the Absence of a stepfor finishing to the target shape involving the operator dressing thepolishing pad 13 on the basis of trial and error, the shape adjustmentof the polishing pad can be carried out in a short time and thethroughput of the polishing steps as a whole can be improved.

In addition, dressing position setting means of the polishing apparatus1, based on data illustrating the relationship between the dressingposition P and polishing pad 13 shape change, obtains the dressingposition P at which the undulation displacement δ speed of change V_(δ)(=d_(δ)/dt) of the polishing pad 13 is approximately zero, and uses thethus-obtained dressing position P as a criterion to set the dressingposition (equivalent to the shape-keep position Pv of this embodiment)at which the polishing pad 13 shape change is minimized.

In addition, this polishing apparatus 1 comprises pad type detectionmeans (equivalent to pad type discriminating protrusions 13 a of thepolishing pad 13 and pad shape measurement instrument 20 of thisembodiment) for detecting the polishing pad 13 type mounted on thepolishing tool 10, and polishing condition setting means (equivalent tothe polishing control unit 60 of this embodiment) for setting thepolishing conditions of the semiconductor wafer W serving as thepolishing target object in accordance with the polishing pad 13 typedetected by pad type detection means, the polishing pad 13 type beingautomatically discriminated, and the conditions (for example, variousconditions such as the relative movement speed and polishing time and soon of the polishing pad 13 with respect to the polishing target objectduring polishing) for polishing the polishing target object(semiconductor wafer W) being automatically set. Unlike the prior art,because of the absence in this polishing apparatus 1 of a step in whichthe polishing pad 13 type is discriminated by an operator and thepolishing conditions set in accordance therewith, the throughput of thepolishing steps as a whole can be improved. A configuration such as thisin which, by virtue of comprising pad type detection means and polishingcondition setting means for setting the conditions for polishing thepolishing target object in accordance with the type of polishing paddetected by pad type detection means, the polishing pad type isautomatically discriminated and the polishing target object polishingconditions automatically set in response thereto, is able to haveapplication in polishing apparatuses of a different configuration to thepolishing apparatus 1 outlined in this embodiment.

In addition, because this polishing apparatus 1 comprises processoperation means (equivalent to process operation unit 70 in thisembodiment) for performing process operations such as conveyance and soon of the polishing target object (semiconductor wafer W) and thepolishing pad 13 and monitoring control means (equivalent to themonitoring control unit 62 of this embodiment) for monitoring theprogress state of the polishing steps and executing an actuation controlof process operation means in accordance with this progress state of thepolishing steps and adjustments can be automatically made to theprogress of the process operations during the time that is taken to setthe dressing conditions and when delays occurs in the polishing stepsthemselves, the downtime of the polishing apparatus 1 can be reducedand, in turn, a reduction in costs can be achieved.

Second Example

A second embodiment of the present invention will be hereinafterdescribed. The polishing apparatus 1 of the configuration shown in FIG.1 is employed in this second embodiment as well, and the steps forpolishing the semiconductor wafer W by this polishing apparatus 1 areperformed in the sequence: (1) polishing pad 13 mounted on the polishingtool 10 by the process operation unit 70→(2) polishing pad 13 machined(dressed) by the dresser 30→(3) semiconductor wafer W carried in by theprocess operation unit 70 and mounted on the rotating support 40→(4)polishing pad 13 dressed by the dresser 30→(5) semiconductor wafer Wpolished by the polishing pad 13→(6) semiconductor wafer W removed fromthe rotating support 40 and carried out by the process operation unit70→(3)→(4)→(5)→(6)→(3) . . . . While this polishing apparatus 1, asdescribed above, comprises a step for dressing the polishing pad 13provided in the polishing tool 10 (aforementioned Step (4)) as anintermediate process in a series of polishing steps for continuouslypolishing the plurality of semiconductor wafers W by the polishing tool10, in this polishing apparatus 1 a step for shape adjusting (machining)the polishing pad 13 that utilizes the step for dressing the polishingpad 13 is automatically performed as an intermediate process in thepolishing steps, and this step will be hereinafter described in detail.

The polishing pad 13 is able to be produced as three shape types, thatis, a projecting conical shape in which the center portion projectsdownward from the perimeter portion (see FIG. 2(A)), a smooth shape inwhich the surface as a whole is flat (smooth) (see FIG. 2(B)), and arecessed conical shape in which the center portion depresses upward fromthe perimeter portion (see FIG. 2(C)) and, as these are identical to theshape types of the first embodiment, an explanation thereof has beenomitted.

In the polishing apparatus 1 pertaining to the second embodiment, firstthe shape-keep position Pv is detected by same method such as trial anderror and the thus-obtained value set as an apparatus constant which,when the polishing pad 13 is dressed, is used for dressing theshape-keep position Pv. By virtue of this and, in addition, as a resultof the dressing being performed not only at a stage prior tocommencement of the polishing steps but also following the start of thepolishing steps, every time the polishing of one or a plurality ofsemiconductor wafers W has been completed, the shape of the polishing 13is able to be retained to the target shape. However, even if thedressing position P of the dresser 30 is set to the shape-keep positionPv prior to the start of the polishing steps, because of characteristicchanges in the dresser 30 and errors in the set shape-keep position Pvthat occur during the process in which the polishing target objects(semiconductor wafers W) are polished one after the other in accordancewith the progress of the polishing steps, the preestablished targetshape of the polishing pad 13 cannot be retained. In other words, thisis liable to occur when the true shape-keep position Pv of the dresser30 cannot be accurately set and when fluctuations in the true shape-keepposition Pv of the dresser 30 occur. In order to specificallydistinguish the true shape-keep position Pv of the dresser 30 this ishereinafter referred to as the “true shape-keep position Pvr”.

While in this polishing apparatus 1 the undulation displacement δ of thepolishing pad 13 is measured by the pad shape measurement unit 20 asdescribed later, taking this undulation displacement δ as a resultobtained by integration of the undulation displacement δ speed of changeV_(δ) with a predetermined sample time t, the relational equation:

V _(δ) =dδ/dt  (2)

is established. On the other hand, since there is known to beproportional relationship between the undulation displacement δ speed ofchange V_(δ) and the aforementioned shift amount ∈, taking theproportional constant thereof as K_(∈), the relationship:

V _(δ) =K _(∈)×∈  (3)

is established. FIG. 5, which shows the relationship descried above, isa block diagram showing the relationship between the true shape-keepposition Pvr, the dressing position P at the time of dressing, and theundulation displacement δ of the polishing pad 13 measured by the padshape measurement unit 20. In FIG. 5, the value of the undulationdisplacement δ measured by the pad shape measurement unit 20 isindicated as U₁. In addition, while a feedback of 1/T₀ times theundulation displacement δ is shown in FIG. 5, this denotes thesaturation characteristic of the undulation displacement δ, and theactual dressing characteristics of the polishing pad 13 and the dresser30 possesses this saturation characteristic at the very least. Equations(1), (2) and (3) constitute equations in which this feedback is ignored.However, the present invention possesses an adaptability unrelated tothe existence of this saturation Characteristic. T₀ denotes a constantwhen saturation has occurred.

FIGS. 6 to 8 show a configuration of the polishing apparatus 1 of theconfiguration described above in which, even if the preestablishedtarget shape of the polishing pad 13 cannot be retained due to error inthe set shape-keep position Pv or characteristic changes in the dresser30, the dressing position P obtained by feedback correction of the setshape-keep position Pv can be controlled or the shape-keep position Pvcan be automatically updated to retain the undulation displacement δ ofthe polishing pad 13 to the target undulation displacement δT. In thefirst example shown in FIG. 6, a configuration in which the dressingposition P is altered with respect to the shape-keep position Pv or aconfiguration for resetting the shape-keep position Pv based oncalculation of the difference E_(δ)=U₁−U₀ between the undulationdisplacement δ of the polishing pad 13 measured by the pad shapemeasurement unit 20 (value U₁) and the set target undulationdisplacement δT (value taken as U₀) and, furthermore, employment of thevalue U₂ obtained by integration of this difference E_(δ) with thepredetermined sample time t (far example, of a magnitude proportional toU₂) is adopted. Here, because a positive U₂ sign implies that the valueof the measured undulation displacement δ of the polishing pad 13 islarger than the target undulation displacement δT, the dressing positionP can be caused to approach (shift amount ∈ caused to approach 0) thetrue shape-keep position Pvr by decreasing the value of the dressingposition P with respect to the existing set shape-keep position Pv and,as a result, the undulation displacement δ of the polishing pad 13 canbe caused to approach the target undulation displacement δT. On theother hand, because a negative U₂ sign implies that the value of themeasured undulation displacement δ of the polishing pad 13 is less thanthe target undulation displacement δT, the dressing position P can becaused to approach (shift amount E caused to approach 0) the trueshape-keep position Pvr by increasing the value of the dressing positionP with respect to the existing set shape-keep position Pv and, as aresult, the undulation displacement δ of the polishing pad 13 can becaused to approach the target undulation displacement δT. In the firstexample shown in FIG. 6, a so-called PI control system in which a valueobtained by multiplying a predetermined proportional constant K_(p) withE_(δ) and a value obtained by multiplying a predetermined proportionalconstant K_(L) with U₂ is used for shift amount ∈ feedback is adopted.

In the second example shown in FIG. 7, a configuration in which thedressing position P is altered with respect to the shape-keep positionPv or a configuration for resetting the shape-keep position Pv based oncalculation of the difference E_(δ)=U₁−U₀ between the undulationdisplacement δ of the polishing pad 13 measured by the pad shapemeasurement unit 20 (value U₁) and the set target undulationdisplacement δT (value U₀), and then passing of this difference E_(δ)through a phase compensation filter ((T₂S+1)/(T₁S+1); T_(p), T₂ areconstants, S is a Laplace operator) and, furthermore, employment of thevalue U₂ obtained by integration of the value passing through this phasecompensation filter with the predetermined sample time t (for example,of a magnitude proportional to U₂) is adopted (fluctuation relationshipbetween the sign of U₂ and the dressing position P is the same as thefirst example). In this second example shown in FIG. 7, a system inwhich a value obtained by multiplying a predetermined proportionalconstant with the obtained value U₂ is used for shift amount ∈ feedbackis adopted.

In addition, in the third example shown in FIG. 8, a configuration inwhich the dressing position P is altered with respect to the shape-keepposition Pv or a configuration for resetting the shape-keep position Pvemploying the difference E_(δ) between the undulation displacement δ ofthe polishing pad 13 measured by the pad shape measurement unit 20(value U₁) and the set target undulation displacement δT (value U₀) (forexample, of a magnitude proportional to the E_(δ)) is adopted. Here,because a positive E_(δ) sign implies that the value of the measuredundulation displacement δ of the polishing pad 13 is larger than thetarget undulation displacement δT, the dressing position P can be causedto approach (shift amount ∈ caused to approach 0) the true shape-keepposition Pvr by decreasing the value of the dressing position P withrespect to the existing set shape-keep position Pv and, as a result, theundulation displacement δ of the polishing pad 13 can be caused toapproach the target undulation displacement δT. On the other hand,because a negative E_(δ) sign implies that the value of the measuredundulation displacement δ of the polishing pad 13 is less than thetarget undulation displacement δT, the dressing position P can be causedto approach (shift amount ∈ caused to approach 0) the true shape-keepposition Pvr by increasing the value of the dressing position P withrespect to the existing set shape-keep position Pv and, as a result, theundulation displacement δ of the polishing pad 13 can be caused toapproach the target undulation displacement δT. In the third exampleshown in FIG. 8, a so-called PD control system in which a value obtainedby multiplying a predetermined proportional constant K_(p) with E_(δ)and a value obtained by multiplying a predetermined proportionalconstant K_(D) with a value U₄ obtained by differentiation of U₁ is usedfor shift amount E feedback is adopted.

In the configuration of each of these three examples in which control ofthe position (dressing position P) of the dresser 30 with respect to thepolishing pad 13 so that the shape of the polishing pad 13 obtained byshape measurement of the polishing pad 13 approaches the predeterminedtarget shape is common thereto, even when the preestablished targetshape of the polishing pad 13 cannot be retained due to set shape-keepposition Pv error or characteristic changes in the dresser 30, thefeedback-corrected dressing position P can be controlled with respect tothe set shape-keep position Pv or the shape-keep position Pv can beautomatically updated so that the undulation displacement δ of thepolishing pad 13 is retained at the target undulation displacement δT.

The semiconductor wafer W polishing sequence flow of this polishingapparatus 1 will be hereinafter described with reference to FIG. 9. Thepolishing sequence involves first of all the dresser 30 being set to theshape-keep position Pv with the polishing tool 10 (that is to say, thepolishing pad 13) moved to the dressing station ST2 (Step S21). Theshape-keep position Pv predetected by some method is set as an apparatusconstant. In addition, in Step S21 (or at a stage prior to Step S21), asemiconductor wafer W interval number at which the timing at which shapemeasurement of the polishing pad 13 is implemented is established, and atotal of semiconductor wafers W to be polished by the series ofpolishing steps is set. Here, for example, the interval number is set at25 and the total number is set at 120.

Upon completion of Step S11, the process operation unit 70 is actuatedso that the semiconductor wafer W to be subsequently polished is setonto the rotating support 40 (Step S22). Upon completion of Step S22,the polishing control unit 60 executes an actuation control of thepolishing tool 10 and the dresser 30 for the polishing pad 13 to bedressed by the dresser 30 (Step S23). Simultaneously, the dressing timeTd is measured, and the sum time ΣTd of the hitherto performed dressingtime Td is calculated.

Upon completion of Step S23, the polishing control unit 60 moves thepolishing tool 10 to the polishing station ST3, and the semiconductorwafer W set to the rotating support 40 in Step S22 is polished (StepS24). The semiconductor wafer W polishing is executed as a result of anactuation control of the rotating support 40 and polishing tool 10 bythe polishing control unit 60.

Upon completion of Step S24, a judgment of whether or not the presettotal number of semiconductor wafers W have been polished is made (StepS25). Here, while when the number of hitherto polished semiconductorwafers W has reached the total number the polishing sequence iscompleted, if the number of hitherto polished semiconductor wafers Wpoint has not reached the total number the process advances to the nextStep S26.

In Step S26, a judgment of whether or not the polishing of thesemiconductor wafer W polished in the immediately precedingsemiconductor wafer polishing (Step S23) corresponds to the timingnumber for shape measurement of the polishing pad 13 is made. Here, whenthe interval number is set as 25 and the total number is set as 120 asdescribed above, the measurement timing numbers are, apart from the1^(St) wafer, the 26^(th), 51^(st), 76^(th) and 101^(st) wafers. Whenthere is an absence of correspondence with the measurement timingnumber, the process returns to Step S22 and the next semiconductor waferW to be polished is set and, when there is correspondence with themeasurement timing number, the process advances to the next Step S27.

In Step S27, the polishing tool 10 is moved to the pad shape measurementstation ST1, and the undulation displacement 6, thickness th and groovedepth de of the polishing pad 13 are measured by the pad shapemeasurement unit 20. The undulation displacement δ shown in FIG. 2constitutes a value obtained by multiplying a difference length Lbetween the outer diameter and inner diameter of the polishing pad 13with a supplementary angle θ of a conical vertical angle obtained byconical shape approximation of the surface of the polishing pad 13. Inaddition, as shown in FIG. 2, the pad thickness th denotes the thicknessfrom the average surface position of the polishing pad 13 to the surfaceof the plate 14 on which the polishing pad 13 is affixed. In addition,the groove depth de of the polishing pad 13 here denotes the averagevalue of the depth d (see FIG. 2) of all of the grooves of the polishingpad 13. The dressing position P is controlled employing the controlmethod outlined in the first to third examples or similar describedabove so that the shape of the polishing pad 13 obtained by the shapemeasurement of the polishing pad 13 approaches the preestablished targetshape. The sample time employed here constitutes a sum time ΣTd of thedressing time Td calculated in the immediately preceding Step S23. Forexample, taking the interval number as 25 as described above and thedressing time performed on a single semiconductor wafer W as 10 seconds,the sample time is 250 seconds. The control of the feedback-correcteddressing position P with respect to the set shape-keep position Pv isbased on actuation control of the pad shape measurement unit 20 executedby the measurement control unit 61 and polishing control unit 60.

Upon completion of Step S27, the polishing conditions are calculated andcorrected (Step S28) is performed. Correlation data of polishingconditions based on undulation displacement δ of the polishing pad 13and the thickness th of the polishing pad 13 and so on are prestored asa database in the storage unit of the polishing control unit 60 notshown in the diagram, and the optimum polishing conditions arecalculated and corrected on the basis of the undulation displacement δand thickness th of an immediately preceding measured polishing pad 13.These polishing conditions include the target undulation displacement δTof the polishing pad 13, the rotational speed of each of the polishingtool 10 and rotating support 40, the relative oscillating speed andoscillating width of the polishing tool 10, the magnitude of thepressure and the polishing time of the semiconductor wafer W on thepolishing tool 10, and the slurry supply flow rate and flow amount.

Upon completion of Step S28, the measured data and control parameters(shape-keep position Pv and polishing conditions and so on) calculatedon the basis of the data of Step S27 and Step S28 are set (updated) asnew apparatus constants (Step S29). Upon completion of Step S29, theprocess returns to Step S22 and, subsequent to the next semiconductorwafer W to be polished being set, the steps for dressing and summing thedressing time (Step S23), polishing the semiconductor wafer W (StepS24), controlling the shape measurement and dressing position P of thepolishing pad 13 (Step S27), and calculating the polishing conditions(Step S28) are repeated. When polishing the total number ofsemiconductor wafers W of Step S25 is judged to have been completed, thepolishing sequence is completed.

In this way, the polishing apparatus 1 pertaining to the presentinvention comprises dressing control means (equivalent to themeasurement control unit 61 and polishing control unit 60 of thisembodiment) for dressing the polishing pad 13 using the dresser 30 in anintermediate process in a series of polishing steps for continuouslypolishing one or a plurality of polishing target objects by a polishingtool 10 every time the polishing of a plurality of semiconductor wafersW is completed, and dressing position control means (equivalent to themeasurement control unit 61 and polishing control unit 60 of thisembodiment) for measuring the shape of the polishing pad 13 by the padshape measurement unit 20 whenever polishing a predetermined number(equivalent to the interval number in the example described above) ofpolishing target objects is completed, and controlling the position ofthe dresser 30 with respect to the polishing pad 13 so that the shape ofthe polishing pad obtained by the shape measurement of the polishing pad13 approaches the preestablished target shape. By virtue of thepolishing apparatus 1 pertaining to the present invention having theaforementioned configuration the step for machining the polishing pad 13to the predetermined target shape is automatically performed and, unlikein the prior art, because of the absence of a step for finishing to atarget shape based on the polishing steps being interrupted and then thepolishing pad 13 being dressed by an operator on the basis of trial anderror with the polishing steps of the polishing apparatus beinginterrupted, the polishing pad shape adjustment can be performed in ashort time and the throughput of the polishing steps as a whole can beimproved.

In addition, in this polishing apparatus 1 when the groove depth de ofthe polishing pad 13 is detected as having reached a preset depth de_(b)on the basis of groove depth de information measured whenever polishingpad 13 dressing for a predetermined time Td has been completed, thepolishing control unit 60 assumes that the usage lifespan of thepolishing pad 13 has expired and executes an operation control of theprocess operation unit 70 for the polishing pad 13 to be replaced. Afterthe polishing pad 13 is replaced, a step for machining the new polishingpad 13 is executed in accordance with the sequence described above.

In addition, while the grinding rate of the dresser 30 can be calculatedin this polishing apparatus 1 by measuring the thickness th of thepolishing pad 13, because a gradual drop in grinding rate normallyoccurs as the number of polishing target objects (here, thesemiconductor wafers W) increases, a constant sharpened dresser 30 statecan be maintained by increasing the dressing time whenever asemiconductor wafer W polishing is completed in proportion to this dropin the grinding rate.

In addition, because this polishing apparatus 1 comprises processoperation means (equivalent to process operation unit 70 in thisembodiment) for performing process operations such as conveyance and soon of the polishing target object (semiconductor wafer W) and polishingpad 13 and monitoring control means (equivalent to the monitoringcontrol unit 62 of this embodiment) for monitoring the progress state ofthe polishing steps and executing an actuation control of processoperation means in accordance with this progress state of the polishingsteps and adjustments can be automatically made to the progress of theprocess operations during the time that is taken to set the dressingconditions and when delays occurs in the polishing steps themselves, thedowntime of the polishing apparatus 1 can be reduced and, in turn, areduction in costs can be achieved.

Third Example

An embodiment of a method of manufacturing a semiconductor devicepertaining to the present invention will be hereinafter described. FIG.10 is a flowchart of the semiconductor device manufacturing process.When the semiconductor manufacturing process is started, first, in StepS200, a suitable processing step is selected from among the laterdescribed Steps S201 to S204, and the process advances to thethus-selected step. Here, the Step S201 constitutes an oxidation stepfor oxidizing the surface of a wafer. Step S202 is a CVD step forfabricating an insulation film or dielectric film on the wafer surfaceusing a CVD or the like. Step S203 is a electrode-forming step forfabricating an electrode on the wafer by vapor-deposition or the like.Step S204 is an ion impregnation step for impregnating a wafer withions.

Subsequent to the CVD step (S202) or electrode-forming Step (S203) beingperformed, the process advances to Step S205. Step S205 is a CMP step.In the CMP step, using the polishing apparatus 1 based on the presentinvention, a damascene structure is fabricated by smoothing aninter-layered insulation films and polishing the metal film of thesurface of the semiconductor device, and polishing the dielectric filmand so on.

Subsequent to the CMP step (S205) or oxidation step (S201) beingperformed, the process advances to Step S206. Step S206 is aphotolithography step. In this step, a resist is coated on the wafer, acircuit pattern is printed onto the wafer by exposure employing anexposure device, and the exposed wafer is developed. The following StepS207 is an etching step in which the portion apart from the developedresist image is removed by etching, the resist is then peeled off, andthe unnecessary resist following completion of the etching is removed.

Next, in Step S208, a judgment of whether all necessary steps have beencompleted is made and, if not all steps have been completed, the processreturns to Step S200 and the previous steps are repeated to fabricate acircuit pattern on the wafer. If all steps are judged to have beencompleted in Steps S208, the process ends.

Because the polishing apparatus 1 pertaining to the present invention isemployed in the polishing step (CMP step) of the semiconductor wafer Win the method of manufacturing a semiconductor device pertaining to thepresent invention, the throughput of the polishing steps of thesemiconductor wafer W is improved, and the semiconductor device can bemanufactured at a lower cost than using conventional method ofmanufacturing a semiconductor device. The polishing apparatus 1pertaining to the present invention may be employed in CMP steps otherthan for the semiconductor device manufacturing process described above.In addition, because the semiconductor device pertaining to the presentinvention is manufactured by the method of manufacturing a semiconductordevice pertaining to the present invention, a low cost semiconductordevice can be manufactured.

While preferred embodiments of the present invention have been describedabove, the scope of the present invention should not be regarded asbeing limited to these embodiments. For example, while in theconfiguration of the polishing apparatus 1 pertaining to the embodimentdescribed above the surface of the polishing target object mounted onthe upper surface side of the rotating support 40 is polished by apolishing tool 10 that is positioned over the rotating support 40 andcomprises on the lower face thereof the polishing pad 13, but aconfiguration in which the surface of a polishing target object mountedon the lower end of a spindle is polished by a polishing pad 13 mountedon an upper surface side of the rotating table positioned therebelow maybe adopted. In addition, the object to be polished by the polishingapparatus 1 pertaining to the present invention, that is to say, thepolishing target object, is not limited to a semiconductor wafer and mayinclude other objects such as a liquid crystal substrate.

1-12. (canceled)
 13. A polishing apparatus for polishing a surface of apolishing target object by polishing tool on which a polishing pad ismounted, comprising: pad type detection means for detecting, based on ameasurement of the polishing pad, a type of the polishing pad mounted onthe polishing tool; and polishing condition setting means for settingpolishing conditions of the polishing target object in accordance withthe type of the polishing pad detected by the pad type detection means.14. A method of manufacturing a semiconductor device, comprising a stepof smoothing a surface of a semiconductor wafer serving as the polishingtarget object by using the polishing apparatus according to claim 13.15. The polishing apparatus of claim 13, wherein the measurement is ameasurement of a shape of the polishing pad.
 16. The polishing apparatusof claim 13, wherein the measurement is based on pad-type discriminationprotrusions formed in the polishing pad.
 17. The polishing apparatus ofclaim 13, wherein the measurement is based on measurement of anundulating shape in the polishing pad.
 18. The polishing apparatus ofclaim 13, wherein the measurement is a measurement of a reflectance ofthe polishing pad.